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MRF374A
1
RF Device Data
Freescale Semiconductor
RF Power Field--Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large--signal, common source amplifier applications
in 28/32 volt transmitter equipment.
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Typical Two--Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power ? 130 Watts PEP
Power Gain ? 17.3 dB
Efficiency ? 41%
IMD ? --32.5 dBc
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Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW
Output Power
Features
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Integrated ESD Protection
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Excellent Thermal Stability
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Characterized with Differential Large--Signal Impedance Parameters
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RoHS Compliant
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
302
1.72
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.58
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Document Number: MRF374A
Rev. 5, 5/2006
Freescale Semiconductor
Technical Data
470--860 MHz, 130 W, 32 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F--04, STYLE 1
NI--650
MRF374A
?
Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
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